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垂直磁界中の超伝導薄板内電流前線への薄板列の影響 CiNiiでみる

著者名:
野田 稔 

抄録:
Alignment of superconducting thin plates,in order with edge to edge,under a perpendicular magnetic field���� ,givesinfluence on a configuration of shielding current front in each plate.In the case of inverse aspect ratio α=0.01,andnormalized interval between adjacent plates β=2.01~3.0, two parameters,∇and ������������ , included in an expression ofthe current front curve, are calculated numerically including current contributions up to the fifth adjacent plates.Effect of presence of adjacent plates is very large forβ=2.01especially in very small magnetic field range,such thatcurrent region on ����axis,1-������������ , spreads into an inner area 0.5×10����times as fast as the case of a plate existed alone.

出版年月日:
2010 , 
巻:
42 , 
号:
2 , 
ページ:
123-127 , 
ISSN:
02876620

A Review and Prospect of Area Scaling Trend for SRAM CircuitDesign Solution in Deeper Nano-meter Era CiNiiでみる

著者名:
Yamauchi Hiroyuki 

抄録:
We compare the area scaling trend of various SRAM margin-assist solutions for V����variability issues, which arebased on efforts by not only the cell topology changes from 6T to 8T and 10T but also incorporating multiple voltagessupply and timing sequence controls of read and write. The various solutions are analyzed in light of an impact ofever increasing Vtvariation (σvt) on the required area overhead for each design solution, resulting in slowdown inthe scaling pace. Ifσ��������suppressed to <70mV even at 15nm node, it has been found that 6T will be allowed longreign even in 15nm ifσvtcan be suppressed to <70mV thanks to EOT scaling for LSTP process,otherwise 10T and8T with read modify write will be needed.

出版年月日:
2009 , 
巻:
42 , 
号:
1 , 
ページ:
1-5 , 
ISSN:
02876620

点欠陥が関与するSi中Au拡散数値解における各定数と境界および初期条件 CiNiiでみる

著者名:
師岡 正美 

抄録:
In numerical calculations of the impurity diffusion affected by point defects,one uses many uncertainconstants such as thermal equilibrium concentrations and diffusion constants of vacancies and selfinterstitials.Initial concentrations of substitutional and interstitial impurities are unknown in indiffusionprocess in addition to above constants. Author has used tentative constants and initial values in previouscalculations;for example,initial concentrations multiplied thermal equiribrium values by 10��������in indiffusionprocess. In this paper,a method to provide constants and initial and boundary conditions in the numericalcalculation of Au diffusion in Si affected by vacancies and self-interstitials is proposed.

出版年月日:
2008 , 
巻:
40 , 
号:
2 , 
ページ:
231-236 , 
ISSN:
02876620